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Volumn , Issue , 1996, Pages 1101-1104
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Development of amorphous silicon based P-I-N solar cell in a superstrate structure with P-microcrystalline silicon as window layer
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
CHEMICAL VAPOR DEPOSITION;
COMPUTER SIMULATION;
CRYSTAL STRUCTURE;
CRYSTALLINE MATERIALS;
DIFFUSION;
INTERFACES (MATERIALS);
PERFORMANCE;
SEMICONDUCTING SILICON;
SHORT CIRCUIT CURRENTS;
THIN FILMS;
TUNNEL JUNCTIONS;
ELECTRON BACK DIFFUSION;
MICROCRYSTALLINE SILICON;
OPEN CIRCUIT VOLTAGE;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SINGLE JUNCTION SOLAR CELLS;
SUPERSTRATE STRUCTURE;
SILICON SOLAR CELLS;
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EID: 0030385344
PISSN: 01608371
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/pvsc.1996.564323 Document Type: Conference Paper |
Times cited : (8)
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References (7)
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