Radiation effects on high-efficiency InGaP/InGaAs/Ge triple-junction solar cells developed for terrestrial use

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 990-993

  Imaizumi, Mitsuru ^a   Takamoto, Tatsuya ^b   Ohshima, Takeshi ^c   Yamaguchi, Masafumi ^d   Itoh, Hisayoshi ^c   Matsuda, Sumio ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b SHARP CORPORATION   (Japan)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

^d TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; DURABILITY; ELECTRON IRRADIATION; HARDNESS; HETEROJUNCTIONS; PROTON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM COMPOUNDS; SHORT CIRCUIT CURRENTS;

INDIUM GALLIUM PHOSPHIDE; RADIATION TOLERANCE; TRIPLE JUNCTION SOLAR CELLS;

SOLAR CELLS;

EID: 0036957790     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. N. S. Fatemi et al., "Radiation-Hard High-Efficiency Multi-Junction Solar Cells for Commercial Space Application", Seventeenth EU PVSEC, 2001, in press.
2. R. R. King et al., "Next-Generation, High-Efficiency III-V Multijunction Solar Cells", Twentyeighth IEEE PVSC, 2000 pp. 998-1001.
3. T. Takamoto et al., "High Efficiency InGaP/InGaAs Tandem Solar Cells on Ge Substrates", Twentyeighth IEEE PVSC, 2000 pp. 976-981.
4. 2 Thin Film Solar Cells during Electron and Proton Irradiations", this proceedings.
5. M. Yamaguchi et al., "Minority-Carrier Injection-Enhanced Annealing of Radiation Damage to InGaP Solar Cells", Appl. Phys. Lett. 70, 1997, pp. 2180-2182.
6. B. E. Anspaugh, GaAs Solar Cell Radiation Handbook, JPL Publication 96-9, NASA, 1996.