Raman and IR study of narrow bandgap A-SiGe and μC-SiGe films deposited using different hydrogen dilution

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 1150-1153

  Liao, X ^a   Povolny, H ^a   Agarwal, P ^a   Deng, X ^a  

^a UNIVERSITY OF TOLEDO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COMPOSITION EFFECTS; CRYSTALLINE MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GERMANIUM COMPOUNDS; HYDROGEN; LIGHT; PHASE TRANSITIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; SILANES; THIN FILMS;

AMORPHOUS SILICON GERMANIUM; HYDROGEN DILUTION; MICROSTRYSTALLINE FORMATION;

SILICON SOLAR CELLS;

EID: 0036957550     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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