Improved a-Si1-xGex:H of large x deposited by PECVD

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 567-571

  Wickboldt, Paul ^a   Pang, Dawen ^a   Paul, William ^a   Chen, Joseph H ^b   Zhong, Fan ^c   Cohen, J David ^c   Chen, Yan ^d   Williamson, Don L ^d  

^a HARVARD UNIVERSITY   (United States)

^b BOSTON COLLEGE   (United States)

^c UNIVERSITY OF OREGON   (United States)

^d Department of Geology and Geological Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; DIFFRACTION GRATINGS; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; HYDROGENATION; OPTICAL PROPERTIES; OPTIMIZATION; PHOTOCONDUCTIVITY; PLASMA APPLICATIONS; SILICON ALLOYS; THIN FILMS;

AMBIPOLAR DIFFUSION LENGTH; AMORPHOUS SILICON GERMANIDE; DISCHARGE CHEMISTRY; DISCHARGE PLASMA; ELECTRONIC STATE DEFECT DENSITY; PHOTOCARRIER GRATING MEASUREMENT; PHOTOCONDUCTIVITY MEASUREMENT; PHOTOELECTRONIC PROPERTIES; URBACH PARAMETER; X RAY SCATTERING MEASUREMENT;

AMORPHOUS ALLOYS;

EID: 0030563572     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00765-2     Document Type: Article

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