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Volumn , Issue , 2002, Pages 1006-1009

1-Me-V-electron irradiation of GaInAsN cells

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON IRRADIATION; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TEMPERATURE;

EID: 0036953689     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (5)

References (9)
  • 4
    • 0036681737 scopus 로고    scopus 로고
    • Breakeven criteria for the GaInNAs junction in GaInP/GaAs/GaInNAs/Ge four-junction solar cells
    • D. J. Friedman and S. Kurtz, "Breakeven Criteria for the GaInNAs junction in GaInP/GaAs/GaInNAs/Ge four-junction solar cells," Prog. in PV, 2002.
    • (2002) Prog. in PV
    • Friedman, D.J.1    Kurtz, S.2
  • 7
    • 0012607519 scopus 로고
    • Carrier generation-recombination in the space-charge region of an asymmetrical p-n junction
    • S. C. Choo, "Carrier generation-recombination in the space-charge region of an asymmetrical p-n junction," Solid-State Electronics 11, 1968, pp. 1069-1077.
    • (1968) Solid-State Electronics , vol.11 , pp. 1069-1077
    • Choo, S.C.1
  • 9
    • 0012521162 scopus 로고    scopus 로고
    • Data found on April 2
    • Data found on April 2, 2002 at http://www.spectrolab.com/DataSheets/TNJCell/tnj.pdf
    • (2002)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.