A 0.5W, 850nm AlxGa1-xAs VECSEL with intra-cavity silicon carbide heatspreader

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 2002, Pages 329-330

  Hastie, J E ^a   Jeon, C W ^a   Burns, D ^a   Hopkins, J M ^a   Calvez, S ^a   Abram, R ^a   Dawson, M D ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT SINKS; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; THERMAL CONDUCTIVITY;

HEATSPREADERS; RESONANT PERIODIC GAIN; SEMICONDUCTING ALUMINUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE; VERTICAL CAVITY SURFACE EMITTING LASER;

SEMICONDUCTOR LASERS;

EID: 0036920537     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. M. Kuznetsov et al., IEEE J. of Sel. Topics in Quantum Electron. 5, 561 (1999).
2. T. D. Raymond et al., Opt. Lett. 24, 1127 (1999).
3. M. A. Holm et al., IEEE Phot. Tech. Lett. 11, 1551 (1999).
4. A. Garnache et al., Appl. Phys. Lett. 80, 3892 (2002).
5. M. A. Holm et al., Appl. Opt. 38, (1999).
6. W. J. Alford et al., JOSA B 19, 663 (2002).
7. Z. L. Liau, Appl. Phys. Lett. 77, 651 (2000).