Light-intensity and temperature dependence of trap-dangling bond recombination in hydrogenated microcrystalline silicon

Materials Research Society Symposium - Proceedings

Volumn 715, Issue , 2002, Pages 309-314

  Boehme, Christoph ^a   Lips, Klaus ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTALLINE MATERIALS; HYDROGENATION; MATHEMATICAL MODELS; PARAMAGNETIC RESONANCE; THERMAL EFFECTS; TIME DOMAIN ANALYSIS;

MICROCRYSTALLINE SILICON; SPIN DEPENDENT RECOMBINATION; TRAP DANGLING BOND RECOMBINATION;

SEMICONDUCTING SILICON;

EID: 0036914354     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-715-a16.2     Document Type: Conference Paper

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