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Volumn 452, Issue , 1997, Pages 821-826
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Pulsed ESR study of the conduction electron spin center in μc-Si:H
a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS SILICON;
CRYSTAL DEFECTS;
CRYSTALLINE MATERIALS;
ELECTRON TRANSPORT PROPERTIES;
ELECTRONIC STRUCTURE;
PARAMAGNETIC RESONANCE;
RELAXATION PROCESSES;
CONDUCTION ELECTRON;
DANGLING BOND;
MICROCRYSTALLINE SILICON;
SPIN LATTICE RELAXATION;
SEMICONDUCTING SILICON;
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EID: 0030647461
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (15)
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References (13)
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