Diode-pumped femtosecond oscillators using ultra-broad-band Yb-doped crystals and modelocked using low-temperature grown or ion implanted saturable-absorber mirrors

EPJ Applied Physics

Volumn 20, Issue 3, 2002, Pages 177-182

  Druon, Frederic ^a   Valentine, G J ^a   Chenais S ^a   Raybaut, P ^a   Balembois, F ^a   Georges, P ^a   Brun, A ^a   Kemp, A J ^b   Birkin, D J L ^b   Sibbett, W ^b   Mohr, S ^c   Kopf, D ^c   Burns, D ^d   Courjaud, A ^e   Honninger C ^e   Salin, F ^e   Gaume R ^f   Aron, A ^f   Aka, G ^f   Viana, B ^f   Clerc, C ^g   Bernas, H ^g   more..

^a CNRS   (France)

^b UNIVERSITY OF ST ANDREWS   (United Kingdom)

^c High Q Laser Production GmbH   (Austria)

^d UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^e CENTRE LASERS INTENSES ET APPLICATIONS   (France)

^f PSL RESEARCH UNIVERSITY   (France)

^g 91405 Orsay Campus   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; DOPING (ADDITIVES); ION IMPLANTATION; LIGHT REFLECTION; MIRRORS; PUMPING (LASER); SEMICONDUCTOR DIODES; YTTERBIUM;

SEMICONDUCTOR BRAGG REFLECTORS (SBR);

LASER MODE LOCKING;

EID: 0036899921     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2002089     Document Type: Article

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