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1
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0012682139
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High-power-driven GTO module for 4.5 kV/3 kA snubberless operation
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H. Grüning, B. Ødegård, and J. Rees, "High-power-driven GTO module for 4.5 kV/3 kA snubberless operation," presented at the PCIM, Nürnberg, Germany, 1996.
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PCIM, Nürnberg, Germany, 1996
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Grüning, H.1
Ødegård, B.2
Rees, J.3
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2
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84872869825
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The integrated gate-commutated thyristor: A new high-efficiency, high-power switch for series or snubberless operation
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S. Klaka, M. Frecker, and H. Grüning, "The integrated gate-commutated thyristor: A new high-efficiency, high-power switch for series or snubberless operation," presented at the PCIM, Nürnberg, Germany, 1997.
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PCIM, Nürnberg, Germany, 1997
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Klaka, S.1
Frecker, M.2
Grüning, H.3
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3
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0031700869
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Comparison of high power IGBT's and hard driven GTO's for high power inverters
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S. Bernet, R. Teichmann, A. Zuckerberger, and P. Steimer, "Comparison of high power IGBT's and hard driven GTO's for high power inverters," presented at the IEEE APEC'98, Anaheim, CA, 1998.
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IEEE APEC'98, Anaheim, CA, 1998
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Bernet, S.1
Teichmann, R.2
Zuckerberger, A.3
Steimer, P.4
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4
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0031620097
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Temperature dependent characterization of silicon power semiconductors-a new model validated by device-internal probing between 400 K and 100 K
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A. Schlögl, T. Mnatsakanov, H. Kuhn, and D. Schröder, "Temperature dependent characterization of silicon power semiconductors-A new model validated by device-internal probing between 400 K and 100 K," in Proc. IEEE PESC'98, Kyoto, Japan, 1998, pp. 1720-1725.
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Proc. IEEE PESC'98, Kyoto, Japan, 1998
, pp. 1720-1725
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Schlögl, A.1
Mnatsakanov, T.2
Kuhn, H.3
Schröder, D.4
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5
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0031636354
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Effect of high injection level phenomena on the feasibility of diffusive approximation in semiconductor device modeling
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T. T. Mnatsakanov, D. Schröder, and A. E. Schlögl, "Effect of high injection level phenomena on the feasibility of diffusive approximation in semiconductor device modeling," Solid State Electron., vol. 42, no. 1, pp. 153-163, 1998.
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(1998)
Solid State Electron.
, vol.42
, Issue.1
, pp. 153-163
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Mnatsakanov, T.T.1
Schröder, D.2
Schlögl, A.E.3
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6
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0027835731
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A modular concept for the circuit simulation of bipolar power semiconductors
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D. Metzner, T. Vogler, and D. Schröder, "A modular concept for the circuit simulation of bipolar power semiconductors," in Proc. EPE Conf., Brighton, U.K., 1993.
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Proc. EPE Conf., Brighton, U.K., 1993
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Metzner, D.1
Vogler, T.2
Schröder, D.3
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7
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0012688594
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Modeling and characterizing power semiconductor devices at low temperatures
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T. Vogler, A. E. Schlögl, N. Kasahara, and D. Schröder, "Modeling and characterizing power semiconductor devices at low temperatures," in Proc. IPEC, Vol. 2, Yokohama, Japan, 1995, pp. 1232-1238.
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Proc. IPEC, Vol. 2, Yokohama, Japan, 1995
, pp. 1232-1238
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Vogler, T.1
Schlögl, A.E.2
Kasahara, N.3
Schröder, D.4
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8
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0020087475
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Electron and hole mobilities as a function of concentration and temperature
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N. D. Arora, J. R. Hauser, and D. J. Roulston, "Electron and hole mobilities as a function of concentration and temperature," IEEE Trans. Electron Devices, vol. 29, no. 2, pp. 292-295, 1982.
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(1982)
IEEE Trans. Electron Devices
, vol.29
, Issue.2
, pp. 292-295
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Arora, N.D.1
Hauser, J.R.2
Roulston, D.J.3
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9
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0019608025
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Carrier mobilities in silicon semi-empirically related temperature, doping and injection level
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J. M. Dorkel and P. Leturcq, "Carrier mobilities in silicon semi-empirically related temperature, doping and injection level," Solid State Electron., vol. 24, no. 9, pp. 821-825, 1981.
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(1981)
Solid State Electron.
, vol.24
, Issue.9
, pp. 821-825
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Dorkel, J.M.1
Leturcq, P.2
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10
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0029748235
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State-of-the-art verification of the head driven GTO inverter development for a 100 MVA inertie
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P. Steimer, H. Grüning, J. Werninger, and D. Schröder, "State-of-the-art verification of the head driven GTO inverter development for a 100 MVA inertie," in Proc. IEEE PESC'96, Baveno, Italy, 1996, pp. 1401-1407.
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Proc. IEEE PESC'96, Baveno, Italy, 1996
, pp. 1401-1407
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Steimer, P.1
Grüning, H.2
Werninger, J.3
Schröder, D.4
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