메뉴 건너뛰기




Volumn 38, Issue 6, 2002, Pages 1606-1612

A new validated physically based IGCT model for circuit simulation of snubberless and series operation

Author keywords

Integrated gate commutated thyristor (IGCT) model; Series connection; Snubberless operation

Indexed keywords

COMPUTER AIDED NETWORK ANALYSIS; ELECTRIC COMMUTATION; SEMICONDUCTOR DEVICE MODELS; SWITCHING CIRCUITS; THYRISTORS; VOLTAGE MEASUREMENT;

EID: 0036874246     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2002.804757     Document Type: Article
Times cited : (25)

References (10)
  • 2
    • 84872869825 scopus 로고    scopus 로고
    • The integrated gate-commutated thyristor: A new high-efficiency, high-power switch for series or snubberless operation
    • S. Klaka, M. Frecker, and H. Grüning, "The integrated gate-commutated thyristor: A new high-efficiency, high-power switch for series or snubberless operation," presented at the PCIM, Nürnberg, Germany, 1997.
    • PCIM, Nürnberg, Germany, 1997
    • Klaka, S.1    Frecker, M.2    Grüning, H.3
  • 4
    • 0031620097 scopus 로고    scopus 로고
    • Temperature dependent characterization of silicon power semiconductors-a new model validated by device-internal probing between 400 K and 100 K
    • A. Schlögl, T. Mnatsakanov, H. Kuhn, and D. Schröder, "Temperature dependent characterization of silicon power semiconductors-A new model validated by device-internal probing between 400 K and 100 K," in Proc. IEEE PESC'98, Kyoto, Japan, 1998, pp. 1720-1725.
    • Proc. IEEE PESC'98, Kyoto, Japan, 1998 , pp. 1720-1725
    • Schlögl, A.1    Mnatsakanov, T.2    Kuhn, H.3    Schröder, D.4
  • 5
    • 0031636354 scopus 로고    scopus 로고
    • Effect of high injection level phenomena on the feasibility of diffusive approximation in semiconductor device modeling
    • T. T. Mnatsakanov, D. Schröder, and A. E. Schlögl, "Effect of high injection level phenomena on the feasibility of diffusive approximation in semiconductor device modeling," Solid State Electron., vol. 42, no. 1, pp. 153-163, 1998.
    • (1998) Solid State Electron. , vol.42 , Issue.1 , pp. 153-163
    • Mnatsakanov, T.T.1    Schröder, D.2    Schlögl, A.E.3
  • 8
    • 0020087475 scopus 로고
    • Electron and hole mobilities as a function of concentration and temperature
    • N. D. Arora, J. R. Hauser, and D. J. Roulston, "Electron and hole mobilities as a function of concentration and temperature," IEEE Trans. Electron Devices, vol. 29, no. 2, pp. 292-295, 1982.
    • (1982) IEEE Trans. Electron Devices , vol.29 , Issue.2 , pp. 292-295
    • Arora, N.D.1    Hauser, J.R.2    Roulston, D.J.3
  • 9
    • 0019608025 scopus 로고
    • Carrier mobilities in silicon semi-empirically related temperature, doping and injection level
    • J. M. Dorkel and P. Leturcq, "Carrier mobilities in silicon semi-empirically related temperature, doping and injection level," Solid State Electron., vol. 24, no. 9, pp. 821-825, 1981.
    • (1981) Solid State Electron. , vol.24 , Issue.9 , pp. 821-825
    • Dorkel, J.M.1    Leturcq, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.