Temperature dependent characterization of silicon power semiconductors - a new physical model validated by device-internal probing between 400 K and 100 K

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 2, Issue , 1998, Pages 1720-1725

  Schloegl, A E ^a   Mnatsakanov, T T ^a   Kuhn, H ^a   Schroeder, D ^a  

^a ALL RUSSIAN ELECTROTECHNICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON HOLE SCATTERING (EHS); FREE CARRIER ABSORPTION (FCA); SILICON POWER SEMICONDUCTORS;

CARRIER MOBILITY; ELECTRON ABSORPTION; ELECTRON SCATTERING; IONIZATION OF SOLIDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

POWER ELECTRONICS;

EID: 0031620097     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.1998.703413     Document Type: Conference Paper

References (18)

1. Martin A. Green, "Intrinsic concentration, effective densities of states, and effective mass in silicon," J. Appl. Phys., vol. 67, no. 6, pp. 2944-2954, Marcli 1990.
2. J.E. Lang, F.L. Madarasz, and P.M. Hemeger, "Temperature dependent density of states effective mass in non-parabolic p-type silicon," J. Appl. Phys., vol. 54, no. 6, pp. 3612, 1983.
3. W. Bludau, A. Onton, and W. Heinke, "Temperature dependence of the band gap in silicon," J. Appl. Phys, vol. 45, no. 4, pp. 1846-48, April 1974.
4. G.G. Macfarlane, T.P. McClean, J.E. Quarrington, and V. Roberts, "Fine structure in the absorption-edge spectrum of silicon," Phys.Rev., vol. III, no. 5, pp. 1245-54, September 1958.
5. J.W. Slootboom and H.C. DeGraaf, "Bandgap narrowing in silicon bipolar transistors," IEEE Trans, on Electron Devices, vol. 24, no. 4, pp. 1123-25, 1977.
6. T.T. Mnatsakanov, I.L. Rostovtsev, and N.I Philatov, "Investigation of the effect of nonlinear physical phenomena on charge carrier tranport in semiconductor devices," Solid-state Electron., vol. 30, no. 6, pp. 579-585, 1987.
7. S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer-Verlag, Berlin, 1984.
8. R.G. Pires, R.M. Dickstein, S.L. Titcomb, and R.L. Anderson, "Carrier freezeout in silicon," Cryogenics, vol. 30, pp. 1064, December 1990.
9. Sheng S. Li and W. Robert Thurber, "The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon," Solid-State Electron., vol. 20, pp. 609-616, 1977.
10. Narain D. Arora, John R. Hauser, and David J. Roulston, "Electron and hole mobilities as a function of concentration and temperature," IEEE Trans, on Electron Devices, vol. 29, no. 2, pp. 292-95, Febr. 1982.
11. D. Caughey and R. Thomas, "Carrier mobilities in silicon empirically related to doping and field," IEEE Proc., pp. 2192-93, 1967.
12. R.A. Hopfel, J. Shah, P.A. Wolff, and A.C. Gossard, "Negative absolute mobility of holes in n-doped GaAs quantum wells," Appl. Phys. Lett., vol. 49, no. 10, pp. 572-74, September 1986.
13. B.N. Gresserov and T.T. Mnatsakanov, "Estimate of the role of the electron-hole scattering in the transport of carriers in multylayer gallium arsenide structures," Sov. Phys. Semicond., vol. 24, no. 9, pp. 1042-43, September 1990.
14. D.E. Kane and R.M. Swanson, "Effect of electron-hole scattering on the current flow in semiconductors," J. Appl Phys., vol. 72, no. 11, pp. 5294-304, December 1992.
15. S.M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York, Chichester, Brisbane, Toronto, Singapore, 2. edition, 1981.
16. T.T. Mnatsakanov, D. Schroder, and A.E. Schlogl, "Effect of high injection level phenomena on the feasibility of diffusive approximation in semiconductor device modeling," to be published in Solid-State Electron., 1998.
17. G. Deboy, H. Brunner, G. Solkner, W. Claeys, S. Dil-haire, V. Quintard, and F. Koch, "A contactless analysis scenario for the investigation of dynamic behaviour of power semiconductors: Internal and external laser probing in comparison with computer simulations," in Proc. of the ESREF, 1994, p. 189.
18. J.M. Dorkel and Ph. Leturcq, "Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level," Solid-State Electron., vol. 24, no. 9, pp. 821-25, 1981.