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Volumn 11, Issue 4, 2002, Pages 18-22

Implant layers: Leading-edge noncritical lithography

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; BOUNDARY CONDITIONS; CMOS INTEGRATED CIRCUITS; MASKS; MEASUREMENTS; TRANSISTORS;

EID: 0036865174     PISSN: 1074407X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (8)

References (10)
  • 1
    • 0034759402 scopus 로고    scopus 로고
    • Development of DUV resist for zero and angled implant applications
    • P. Fallon, et al., "Development of DUV Resist for Zero and Angled Implant Applications," SPIE Symposium on Advances in Resist Technology and Process, Vol. 4345, p. 601, 2001.
    • (2001) SPIE Symposium on Advances in Resist Technology and Process , vol.4345 , pp. 601
    • Fallon, P.1
  • 2
    • 0033692162 scopus 로고    scopus 로고
    • Thick film positive DUV photoresist for implant layer application
    • M. Mori, et al., "Thick Film Positive DUV Photoresist for Implant Layer Application," SPIE Symposium on Advances in Resist Technology and Process, Vol. 3999, p. 601, 2000.
    • (2000) SPIE Symposium on Advances in Resist Technology and Process , vol.3999 , pp. 601
    • Mori, M.1
  • 3
    • 0034205523 scopus 로고    scopus 로고
    • Minimizing thick resist sidewall slope dependence on design geometry by optimizing bake conditions
    • H. Puchner, et al., "Minimizing Thick Resist Sidewall Slope Dependence on Design Geometry by Optimizing Bake Conditions," Microelectron. Eng., Vol. 53, p. 429, 2000.
    • (2000) Microelectron. Eng. , vol.53 , pp. 429
    • Puchner, H.1
  • 4
    • 0012036385 scopus 로고    scopus 로고
    • Photoresist properties during high current implantation: An i-line vs. DUV resist comparison
    • C. Norton, et al., "Photoresist Properties During High Current Implantation: an i-line vs. DUV Resist Comparison," 2000 Intl Conf on Ion Implantation Technology Proc, pp. 813-816, 2000.
    • (2000) 2000 Intl Conf on Ion Implantation Technology Proc , pp. 813-816
    • Norton, C.1
  • 5
    • 0036416638 scopus 로고    scopus 로고
    • Reduction of reflective notching through illumination optimization
    • to be published
    • J. Word., D. Chou, Y. Gu, J. Sturtevant, "Reduction of Reflective Notching Through Illumination Optimization," SPIE, to be published, 2002.
    • (2002) SPIE
    • Word, J.1    Chou, D.2    Gu, Y.3    Sturtevant, J.4
  • 6
    • 0031372882 scopus 로고    scopus 로고
    • The effect of partial coherence on reflective notching
    • R. Socha, C. Progler, A. Neureuther, "The Effect of Partial Coherence on Reflective Notching," SPIE, Vol. 3051, p. 479, 1997.
    • (1997) SPIE , vol.3051 , pp. 479
    • Socha, R.1    Progler, C.2    Neureuther, A.3
  • 7
    • 0031222068 scopus 로고    scopus 로고
    • The effect of numerical aperture and partial coherence on swing curve
    • Autumn
    • Chris A. Mack, "The Effect of Numerical Aperture and Partial Coherence on Swing Curve," Microlithography World, Vol. 6, No. 4, Autumn 1997.
    • (1997) Microlithography World , vol.6 , Issue.4
    • Mack, C.A.1
  • 8
    • 0012037853 scopus 로고    scopus 로고
    • Reduction of implantation shadowing effect by double exposure photo process
    • to be published
    • Y. Gu, D. Chou, S.Y. Lee, W. Roche, J. Sturtevant, "Reduction of Implantation Shadowing Effect by Double Exposure Photo Process," Proc. SPIE 2002, to be published.
    • (2002) Proc. SPIE
    • Gu, Y.1    Chou, D.2    Lee, S.Y.3    Roche, W.4    Sturtevant, J.5
  • 10
    • 0033706994 scopus 로고    scopus 로고
    • Studies directed to the design and development of high energy implant resist
    • W. Montgomery, et al., "Studies Directed to the Design and Development of High Energy Implant Resist," Proc. SPIE 3999, p. 531, 2000.
    • (2000) Proc. SPIE , vol.3999 , pp. 531
    • Montgomery, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.