High-performance 1-Gb NAND flash memory with 0.12-μm technology

IEEE Journal of Solid-State Circuits

Volumn 37, Issue 11, 2002, Pages 1502-1509

  Lee, June ^a,b   Im, Heung Soo ^a,b   Byeon, Dae Seok ^a,b   Lee, Kyeong Han ^a,b   Chae, Dong Hyuk ^a,b   Lee, Kyong Hwa ^a,b   Hwang, Sang Won ^a,b   Lee, Sung Soo ^a,b   Lim, Young Ho ^a,b   Lee, Jae Duk ^a,b   Choi, Jung Dal ^b   Seo, Young Il ^b   Lee, Jong Sik ^b   Suh, Kang Deog ^b  

^a IEEE   (United States)

^b SAMSUNG Electronics   (South Korea)

Author keywords

32 cell NAND structure; Cache program; CMOS memory integrated circuits; EEPROM; Flash memory; NAND flash memory; Page copy back; Pseudo 4 phase charge pump

Indexed keywords

CACHE MEMORY; CAPACITANCE; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC POTENTIAL; INTEGRATED CIRCUIT MANUFACTURE; POWER SUPPLY CIRCUITS;

CACHE PROGRAM; NAND FLASH MEMORY; PAGE COPY BACK; PHASE CHARGE PUMP CIRCUIT;

FLASH MEMORY;

EID: 0036858571     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2002.802352     Document Type: Article

References (9)

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