Single-particle energy states in the two-dimensional electron gas of GaN-based single heterostructure field effect transistors

Semiconductor Science and Technology

Volumn 17, Issue 11, 2002, Pages 1180-1183

  Gaggero Sager, L M ^a,b   Mora Ramos, M E ^b  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b UNIVERSIDAD AUTÓNOMA DEL ESTADO DE MORELOS   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTRON GAS; ELECTRONIC DENSITY OF STATES; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PARTICLES (PARTICULATE MATTER); SEMICONDUCTING ALUMINUM COMPOUNDS;

ELECTRONIC ENERGY SPECTRUM; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; SHEET DENSITY CHARGE; SINGLE-PARTICLE ENERGY STATE; THOMAS-FERMI MODEL; TWO-DIMENSIONAL ELECTRON GAS;

FIELD EFFECT TRANSISTORS;

EID: 0036851983     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/11/308     Document Type: Article

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