Fabrication of high-quality YBa2Cu3O7-δ multilayer structure using chemical mechanical planarization for superconducting quantum interference device gradiometer

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 10 A, 2002, Pages

  Takashima, Hiroshi ^a   Kasai, Naoko ^a   Shoji, Akira ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Chemical mechanical planarization; Epitaxial growth; Grain boundary dosephson junction; Multilayer; STO; YBCO

Indexed keywords

CRYSTALS; EPITAXIAL GROWTH; FABRICATION; GRAIN BOUNDARIES; JOSEPHSON JUNCTION DEVICES; MULTILAYERS; QUANTUM INTERFERENCE DEVICES; SUBSTRATES; SUPERCONDUCTING TRANSITION TEMPERATURE; YTTRIUM BARIUM COPPER OXIDES;

CHEMICAL MECHANICAL PLANARIZATION;

HIGH TEMPERATURE SUPERCONDUCTORS;

EID: 0036814283     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l1062     Document Type: Article

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