Quenching and recovery of photoluminescence intensity of silicon nanoparticles embedded in optically transparent polymers

Semiconductor Science and Technology

Volumn 17, Issue 10, 2002, Pages 1123-1127

  Singh, P K ^a   Lakshmikumar, S T ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

LASER BEAM EFFECTS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POLYMETHYL METHACRYLATES; QUENCHING;

OPTICALLY TRANSPARENT POLYMERS; POROUS SILICON NANOPARTICLES (PSN);

POROUS SILICON;

EID: 0036802821     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/10/316     Document Type: Article

References (25)

1. Canham L.T. 1990 Appl. Phys. Lett. 57 1046.
2. Lin V.S.Y., Motesharie K., Dancil K.P.S., Sailor M.J. and Ghadiri M.R. 1997 Science 278 840.
3. Hamilton B. 1995 Semicond. Sci. Technol. 10 1187.
4. Doan V.V. and Sailor M.J. 1992 Science 256 1791.
5. Sailor M.J., Heinrich J.L. and Lauerhaas J.M. 1996 Semiconductor Nanocrystals ed P.V. Kamat and D. Meisel (New York: Elsevier) p 103.
6. Stewart M.P. and Buriak J.M. 2000 Adv. Mater. 12 859.
7. Vasquez R.P., Fathauer R.W., George T., Ksendzov A. and Lin T.L. 1992 Appl. Phys. Lett. 60 1004.
8. Robinson M.B., Dillon A.C. and George S.M. 1993 Appl. Phys. Lett. 62 1493.
9. Theiss W., Arntzen A., Hilbrich S., Wernke W., Arens-Fischer R. and Bayer M.G. 1995 Phys. Status Solidi b 190 15.
10. Prokes S.M. 1993 Appl. Phys. Lett. 62 3244.
11. Koch F. 1995 Microelectron. Eng. 28 237.
12. Cullis A.G., Canham L.T. and Calcott P.D.J. 1997 J. Appl. Phys. 82 909.
13. Kolasinski K.W., Barnard J.C., Ganguly S., Koker L., Wellner A., Aindow M., Palmer R.E., Field C.N., Hamley P.A. and Poliakoff M. 2000 J. Appl. Phys. 88 2472.
14. Yasumori Y., Kimura H., Okada T., Choe I.Y., Sato Y., Iida M. and Kurosu T. 2000 Japan. J. Appl. Phys. 39 6119.
15. Heinrich J.L., Curtis C.L., Credo G.M., Kavanagh K.L. and Sailor M.J. 1992 Science 255 66.
16. Buriak J.M. and Alien M.J. 1998 J. Am. Chem. Soc. 120 1339.
17. Lopez H.A., Chen X.L., Jenekhe S.A. and Fauchet P.M. 1999 J. Lumin. 80 115.
18. Tischler M.A., Stathis J.H. and Tsang J.C. 1992 Appl. Phys. Lett. 60 639.
19. Stevens P.D. and Glosser R. 1993 Appl. Phys. Lett 63 803.
20. Laiho R., Pavlov A., Hovi O. and Tsuboi T. 1993 Appl. Phys. Lett. 63 275.
21. Seals L., Gole J.L., Tse L.A. and Hesketh P.J. 2002 J. Appl. Phys. 91 2519.
22. Lauerhaus J.M., Credo G.M., Heinrich J.L. and Sailor M.A. 1992 J. Am. Chem. Soc. 114 1911.
23. Jung K.H., Shih S. and Kwong D.L. 1993 J. Electrochem. Soc. 140 3046.
24. Petrov A.V. and Petruklin A.G. 1994 Semiconductors 28 49.
25. Shih S., Jung K.H., Yan Y., Kwong D.L., Kovar M., White J.M., George T. and Kim S. 1993 Appl. Phys. Lett. 63 3306.