Characterization of a two-dimensional electron gas in an InSb/InAlSb heterostructure using surface acoustic wave attenuation

Semiconductor Science and Technology

Volumn 17, Issue 10, 2002, Pages 1111-1114

  Nash, G R ^a   Bending, S J ^b   Buckle, P D ^a   Morgan, D P ^c   Burke, T M ^a   Ashley, T ^a  

^a QINETIQ   (United Kingdom)

^b University of Bath   (United Kingdom)

^c Impulse Consulting   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; INTERFACES (MATERIALS); MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

SURFACE ACOUSTIC WAVE ATTENUATION;

HETEROJUNCTIONS;

EID: 0036800775     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/10/314     Document Type: Article

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