Electrical properties of InSb quantum wells remotely doped with Si

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1367-1371

  Goldammer, K J ^a   Liu, W K ^a,b   Khodaparast, G A ^a   Lindstrom, S C ^a   Johnson, M B ^a   Doezema, R E ^a   Santos, M B ^a  

^a UNIVERSITY OF OKLAHOMA   (United States)

^b Quantum Epitaxial Designs Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001525780     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590077     Document Type: Article

References (14)

1. J. P. Heremans, Mater. Res. Soc. Symp. Proc. 475, 63 (1997).
2. J. Heremans, D. L. Partin, C. M. Thrush, and L. Green, Semicond. Sci. Technol. 8, S424 (1993).
3. W. K. Liu, X. Zhang, W. Ma, J. Winesett, and M. B. Santos, J. Vac. Sci. Technol. B 14, 2239 (1996).
4. M. K. Saker, D. M. Whittaker, M. S. Skolnick, C. F. McConville, C. R. Whitehouse, S. J. Barnett, A. D. Pitt, A. G. Cullis, and G. M. Williams, Appl. Phys. Lett. 65, 1118 (1994).
5. G. M. Williams, C. R. Whitehouse, A. G. Cullis, N. G. Chew, and G. W. Blackmore, Appl. Phys. Lett. 53, 1847 (1988).
6. ThC layer sequence of the N= 1 structure with d = 600 Å is not described by Fig. 1. A second δ-doped layer (10 s) was added 600 Å below the quantum well.
7. L. K. Li, Y. Hsu, and W. I. Wang, J. Vac. Sci. Technol. B 11, 872 (1993).
8. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
9. M. B. Santos, W. K. Liu, R. J. Hauenstein, K. J. Goldammer, W. Ma, and M. L. O'Steen, Mater. Res. Soc. Symp. Proc. 450, 97 (1997).
10. L. J. van der Pauw, Philips Res. Rep. 13, 1 (1958).
11. N. Kuze, K. Nagase, S. Muramatsu, S. Miya, T. Iwabuchi, A. Ichii, and I. Shibasaki, J. Cryst. Growth 150, 1307 (1995).
12. P. E. Thompson, J. L. Davis, J. Waterman, R. J. Wagner, D. Gammon, D. K. Gaskill, and R. Stahlbush, J. Appl. Phys. 69, 7166 (1991).
13. J. R. Soderstrom, M. M. Cumming, J-Y. Yao, and T. G. Anderson, Semicond. Sci. Technol. 7, 337 (1992).
14. G. Singh, E. Michel, C. Jelen, S. Slivken, J. Xu, P. Bove, I. Ferguson, and M. Razeghi, J. Vac. Sci. Technol. B 13, 782 (1995).