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Volumn 46, Issue 3, 1999, Pages 376-381

Electronic properties of semiconducting rhenium silicide

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Indexed keywords


EID: 0033121449     PISSN: 02955075     EISSN: None     Source Type: Journal    
DOI: 10.1209/epl/i1999-00272-8     Document Type: Article
Times cited : (20)

References (21)
  • 7
    • 0025423522 scopus 로고
    • BHATTACHARYYA B. K., BYLANDER D. M. and KLEINMAN L., Phys. Rev. B, 33 (1986) 3947; ITOH S., Mater. Sci. Eng. B, 6 (1990) 37.
    • (1990) Mater. Sci. Eng. B , vol.6 , pp. 37
    • Itoh, S.1
  • 12
    • 33744691386 scopus 로고
    • CEPERLEY D. M. and ALDER B. J., Phys. Rev. Lett., 45 (1980) 566; JANAK J. F., MORUZZI V. L. and WILLIAMS A. R., Phys. Rev. B, 12 (1975) 1257.
    • (1980) Phys. Rev. Lett. , vol.45 , pp. 566
    • Ceperley, D.M.1    Alder, B.J.2
  • 14
    • 0032048276 scopus 로고    scopus 로고
    • However, it is worthwhile to note that the inclusion of f-states is important in oscillator strength calculation of the interband transitions and proper estimations of the optical matrix element values
    • FILONOV A. B., MIGAS D. B., SHAPOSHNIKOV V. L., BORISENKO V. E., HENRION W., REBIEN M., LANGE H. and BEHR G., J. Appl. Phys., 83 (1998) 4410. However, it is worthwhile to note that the inclusion of f-states is important in oscillator strength calculation of the interband transitions and proper estimations of the optical matrix element values.
    • (1998) J. Appl. Phys. , vol.83 , pp. 4410
    • Filonov, A.B.1    Migas, D.B.2    Shaposhnikov, V.L.3    Borisenko, V.E.4    Henrion, W.5    Rebien, M.6    Lange, H.7    Behr, G.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.