Ch4/N2 plasma etching for organic low-k dielectric material

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 9, 2002, Pages 5775-5781

  Nakagawa, Hideo ^a   Morikawa, Yasuhiro ^a,b   Takano, Midori ^a,c   Tamaoka, Eiji ^a   Hayashi, Toshio ^a,b  

^a PANASONIC CORPORATION   (Japan)

^b ULVAC INC   (Japan)

^c Matsushita Technoresearch Inc   (Japan)

Author keywords

CH4; Etching; H2; Low k; Microtrenching; N2; NLD; Organic; Plasma; RIE lag; Taper; XPS

Indexed keywords

DIELECTRIC MATERIALS; PERMITTIVITY; REACTIVE ION ETCHING; SURFACE REACTIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

NEUTRAL LOOP DISCHARGE (NLD) PLASMA ETCHING SYSTEMS;

PLASMA ETCHING;

EID: 0036756924     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5775     Document Type: Article

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