Ultralow-threshold sapphire substrate-bonded top-emitting 850-nm VCSEL array

IEEE Photonics Technology Letters

Volumn 14, Issue 9, 2002, Pages 1234-1236

  Liu, J Jiang ^a,b   Riely, Brian ^b   Shen, Paul H ^a,b   Das, Naresh ^a,b   Newman, Peter ^b   Chang, Wayne ^b   Simonis, George ^a,b  

^a IEEE   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Lasing threshold; Oxide aperture; Polarization; Sapphire substrate; Spectral linewidth; Vertical cavity surface emitting laser

Indexed keywords

VERTICAL-CAVITY SURFACE EMITTING LASERS (VSCEL);

CAVITY RESONATORS; ELECTRIC CURRENTS; FLIP CHIP DEVICES; LIGHT EMISSION; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SAPPHIRE; SPECTRUM ANALYSIS;

INJECTION LASERS;

EID: 0036741226     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.801093     Document Type: Article

References (12)

1. D. W. Prather, S. Venkataraman, M. Lecompte, F. Kiamilev, J. N. Mait, and G. J. Simonis, "Optoelectronic multichip module integration for chip level optical interconnects," IEEE Photon. Technol. Lett., vol. 13, pp. 1112-1114, Oct. 2001.
2. A. G. Andreou, Z. K. Kalayjian, A. Apsel, P. O. Pouliquen, R. A. Athale, G. Simonis, and R. Reedy, "Silicon on sapphire CMOS for optoelectronic microsystems,quot; IEEE Circuits Syst. Mag., vol. 1, pp. 22-30, Mar. 2001.
3. D. V. Plant and A. G. Kirk, "Optical interconnects at the chip and board level: Challenges and solutions," Proc. IEEE, vol. 88, pp. 806-817, June 2000.
4. T. H. Oh, D. L. Huffaker, and D. G. Deppe, "Size effects in small oxide confined vertical-cavity surface-emitting lasers,quot; Appl. Phys. Lett., vol. 69, no. 21, pp. 3152-5154, 1996.
5. K. D. Choquette, W. W. Chow, G. R. Hadley, H. Q. Hou, and K. M. Geib, "Scalability of small-aperture selectively oxidized vertical cavity lasers,quot; Appl. Phys. Lett., vol. 70, no. 7, pp. 823-825, 1997.
6. H. K. Bissessur, F. Koyama, and K. Iga, "Modeling of oxide-confined vertical-cavity surface-emitting lasers,quot; IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 344-352, 1997.
7. A. E. Bond, P. D. Dapkus, and J. D. O'Brien, "Aperture placement effects in oxide-defined vertical-cavity surface-emitting lasers,quot; IEEE Photon. Technol. Lett., vol. 10, pp. 1362-1364, Oct. 1998.
8. D. L. Huffaker, Z. Zou, and D. G. Deppe, "Reduced cavity loss for ultra-low threshold vertical-cavity surface-emitting lasers,quot; in Proc. Electrochem. Soc., vol. 99-17, 1999, pp. 140-151.
9. G. M. Yang, M. H. MacDougal, and P. D. Dapkus, "Ultra-low threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation,quot; Electron. Lett., vol. 31, no. 11, pp. 886-888, 1995.
10. C. K. Lin and P. D. Dapkus, "Uniform wafer-bonded oxide-confined bottom-emitting 850 nm VCSEL arrays on sapphire substrates,quot; IEEE Photon. Technol. Lett., vol. 13, pp. 263-265, Apr. 2001.
11. B. Koley, M. Dagenals, R. Jin, G. Simonis, J. Pham, G. McLane, F. Johnson, and R. Whaley Jr., "Dependence of lateral oxidation rate on thickness of AlAs layer of interest as a current aperture in vertical-cavity surface-emitting laser structures,quot; J. Appl. Phys., vol. 84, pp. 600-606, 1998.
12. E. R. Hegblom, D. I. Babic, B. J. Thibeauk, and L. A. Coldren, "Scatering losses from dielectric apertures in vertical-cavity lasers,quot; IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 379-389, 1997.