Molecular control of the drain current in a buried channel MOSFET

Physica Status Solidi (B) Basic Research

Volumn 233, Issue 1, 2002, Pages 83-89

  Laws, G M ^a   Thornton, T J ^a   Yang, Jinman ^a   De La Garza, L ^b   Kozicki, M ^a   Gust, D ^b  

^a Arizona State University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULES; MOSFET DEVICES; SILICA; SILICON; THRESHOLD VOLTAGE;

ELECTRON CHARGE DENSITY; MOLECULAR CONTROLS; MOLECULAR GROUPS; MOSFET CHANNELS; SUBSTRATE VOLTAGE; SYSTEMATIC VARIATION; THRESHOLD CURRENTS; THRESHOLD SHIFTS;

DRAIN CURRENT;

EID: 0036735394     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200209)233:1<83::aid-pssb83>3.0.co;2-%23     Document Type: Conference Paper

References (10)