Optical properties of Zn 1-xMn xTe epilayers grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2446-2450

  Shih, Y T ^a   Chiang, W C ^b   Yang, C S ^b   Kuo, M C ^b   Chou, W C ^b  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON HOLE PAIRS; EPILAYERS GROWN; EXPERIMENTAL DATA; GAAS(001); INVERSE TEMPERATURES; MN CONCENTRATIONS; PHOTOLUMINESCENCE MEASUREMENTS; PL INTENSITY; PL SPECTRA; RED SHIFT; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE;

ACTIVATION ENERGY; ENERGY GAP; EPILAYERS; EPITAXIAL GROWTH; EXCITONS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM WELLS; SOLIDS; ZINC;

MANGANESE;

EID: 0036733876     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1495065     Document Type: Article

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