|
|
Volumn 243, Issue 3-4, 2002, Pages 463-475
|
|
A numerical study of thermal conditions in the THM growth of HgTe
a
|
|
Author keywords
A1. Computer simulation; A1. Growth models; A1. Travelling heater method; B2. Semiconducting II VI materials; B2. Semiconducting mercury compounds
|
|
Indexed keywords
BOUNDARY CONDITIONS;
COMPUTATIONAL FLUID DYNAMICS;
COMPUTER SIMULATION;
CRYSTALLIZATION;
HEAT FLUX;
HEAT TRANSFER;
ISOTHERMS;
MASS TRANSFER;
MERCURY COMPOUNDS;
SEMICONDUCTOR GROWTH;
SOLVENTS;
TRAVELLING HEATER METHOD (THM);
CRYSTAL GROWTH;
|
|
EID: 0036724771
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(02)01529-4 Document Type: Article |
|
Times cited : (14)
|
|
References (35)
|
