Numerical simulation of THM growth of CdTe in presence of rotating magnetic fields (RMF)

Journal of Crystal Growth

Volumn 205, Issue 1, 1999, Pages 97-111

  Ghaddar, Chahid K ^a   Lee, Cheo K ^a   Motakef, Shariar ^a   Gillies, Donald C ^b  

^a Cape Simulations   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; COMPUTER SIMULATION; CRYSTAL DEFECTS; INTERFACES (MATERIALS); MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; MIXING; NUMERICAL ANALYSIS; SEMICONDUCTOR GROWTH;

BUOYANCY INDUCED CONVECTION; GROWTH FRONT; MICROGRAVITY CONDITION APPLICATION; ROTATING MAGNETIC FIELDS; SOLUTION ZONE COMPOSITION; TRAVELING HEATER METHOD;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0032598207     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00206-7     Document Type: Article

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