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Journal of Crystal Growth

Volumn 180, Issue 3-4, 1997, Pages 566-577

A numerical study of convection during THM growth of CdTe with ACRT

(3) Barz, R U a,b Sabhapathy, P a Salcudean, M a

a UNIVERSITY OF BRITISH COLUMBIA (Canada)

b UNIVERSITY OF MUNICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL GROWTH; HEAT CONVECTION; MIXING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

ACCELERATED CRUCIBLE ROTATION TECHNIQUE (ACRT); CADMIUM TELLURIDE; TRAVELLING HEATER METHOD (THM);

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0031245046 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00255-8 Document Type: Article

Times cited : (25)

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