Growth of Ge films by cluster beam deposition

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 194, Issue 3, 2002, Pages 297-301

  Xu, J L ^a   Chen, J L ^a   Feng, J Y ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

CBD; Epitaxial layers; Ge; Phase trasition; SEM; Si; XRD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL LATTICES; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

CLUSTER BEAM DEPOSITION (CBD) PROCESSES;

SEMICONDUCTING GERMANIUM;

EID: 0036723338     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)00691-2     Document Type: Article

References (14)