High responsitivity near infrared Ge photodetectors integrated on Si

Electronics Letters

Volumn 35, Issue 17, 1999, Pages 1467-1468

  Masini, G ^a   Colace, L ^a   Assanto, G ^a   Luan, H C ^b   Wada, K ^b   Kimerling, L C ^b  

^a ROMA TRE UNIVERSITY   (Italy)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; HETEROJUNCTIONS; PHOTOCURRENTS; SEMICONDUCTING GERMANIUM; SILICON WAFERS; THERMAL CYCLING; VACUUM TECHNOLOGY;

HIGH RESPONSITIVITY NEAR INFRARED GERMANIUM PHOTODETECTORS; ULTRAHIGH VACUUM-CHEMICAL VAPOR DEPOSITION (UHV-CVD);

INFRARED DETECTORS;

EID: 0032686911     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991010     Document Type: Article

References (5)

1. SOREF, R.A.: 'Silicon-based group IV heterostructures for optoelectronic applications', J. Vac. Sci. Technol. 1996, 14, pp. 913-918
2. GIOVANE, L.M., LIM, D.R., AHN, S. H., CHEN, T.D., FORESI, J.S., LIAO, L., OULETTE, E.J., AGARWAL, A.M., DUAN, X., MICHEL, J., THILDERKVIST, A., and KIMERLING, L.C.: 'Materials for monolithic silicon microphotonics' in POLMAN, S.C.A., and SOREF R. (Eds.): 'Materials and devices for silicon-based optoelectronics' (MRS, Warrendale, PA. 1998), pp. 45-56
3. COLACE, L., MASINI, G., GALLUZZI, F., ASSANTO, G., CAPELLINI, G., DI GASPARE, L., PALANGE, E., and EVANGELISTI, F.: 'Metal-semiconductor-metal near infrared light detector based on epitaxial Ge/Si', Appl. Phys. Lett., 1998, 72, pp. 3175-3177
4. SAMAVEDAM, S.B., CURRIE, M.T., LANGDO, T.A., and FITZGERALD, E.A.: 'High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers', Appl. Phys. Lett.. 1998, 73, pp. 2125-2127
5. XU, D., JANZ, S., LAFONTAINE, H., and PEARSON, M.R.T.: 'Photodetectors for 1.3μm and 1.55μm wavelengths using SiGe undulating MQW's on SOI substrates', Proc. SPIE, 1999, 3630, pp. 50-57