Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Applied Physics A: Materials Science and Processing

Volumn 75, Issue 3, 2002, Pages 387-389

  Chu, R M ^a   Zheng, Y D ^a   Zhou, Y G ^a   Han, P ^a   Shen, B ^a   Gu, S L ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; PIEZOELECTRICITY; QUANTUM THEORY; SEMICONDUCTOR DOPING;

QUANTUM CONFINEMENTS;

FIELD EFFECT TRANSISTORS;

EID: 0036722435     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390100978     Document Type: Article

References (10)