Carrier transport in a position sensitive detector based on an ITO/a-Si:H/Pd structure

Sensors and Actuators, A: Physical

Volumn 93, Issue 1, 2001, Pages 48-51

  Nedev, N ^a   Georgiev, S S ^a   Sueva, D ^b   Smirnov, N ^a   Toneva, A ^c  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b UNIVERSITY OF SOFIA   (Bulgaria)

^c BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

Amorphous silicon; Heterostructure; Photodetector; Position sensitive detectors

Indexed keywords

AMORPHOUS SILICON; CALCULATIONS; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; HETEROJUNCTIONS; PHOTODETECTORS; POISSON EQUATION; POSITION MEASUREMENT;

CONSTANT PHOTOCURRENT METHOD; ELECTRON DIFFUSION LENGTH; ELECTRON TRAP DENSITY; HOMOGENOUS CHEMICAL VAPOR DEPOSITION; POSITION SENSITIVE DETECTOR;

SENSORS;

EID: 0035948961     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(01)00625-2     Document Type: Article

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