Activation of nitrogen acceptor in ZnSe homo-epilayer grown by MOCVD

Physica Status Solidi (A) Applied Research

Volumn 193, Issue 2, 2002, Pages 251-256

  Wang, J F ^a   Masugata, D ^a   Oh, C B ^a   Omino, A ^b   Seto, S ^c   Isshiki, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c ISHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANNEALING; CHEMICAL ACTIVATION; DOPING (ADDITIVES); EPITAXIAL GROWTH; IONIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PHOTOLUMINESCENCE;

NITROGEN ACCEPTORS;

ZINC COMPOUNDS;

EID: 0036709560     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200209)193:2<251::AID-PSSA251>3.0.CO;2-W     Document Type: Article

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