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Volumn 221, Issue 1-4, 2000, Pages 393-397
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Compensation of nitrogen acceptor in ZnSe:N/ZnSe grown by MOCVD
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
FILM GROWTH;
IONIZATION OF SOLIDS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
NITROGEN;
PASSIVATION;
SEMICONDUCTING FILMS;
SEMICONDUCTOR DOPING;
DONOR-ACCEPTOR PAIR (DAP);
SEMICONDUCTING ZINC COMPOUNDS;
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EID: 0034497118
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(00)00720-X Document Type: Article |
Times cited : (6)
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References (17)
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