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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 8, 2002, Pages 5073-5077

Photoluminescence from high Γ-electron subbands and intersubband electroluminescence using x-Γ carrier injection in a simple GaAs/AlAs superlattice

(8) Domoto, Chiaki a Nishimura, Takehiro d Ohtani, Naoki a Kuroyanagi, Kazuyoshi b Vaccaro, Pablo O c Aida, Tahito a Takeuchi, Hideo b Nakayama, Masaaki c

a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL (Japan)

b Osaka Prefecture University (Japan)

c KYOCERA CORPORATION (Japan)

d NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japan)

Author keywords

GaAs AlAs superlattice; Interband photoluminescence; Intersubband electroluminescence; Quantum cascade mechanism; X carrier injection

Indexed keywords

ALUMINUM COMPOUNDS; BAND STRUCTURE; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ELECTRONS; GALLIUM COMPOUNDS; SUPERLATTICES;

CARRIER INJECTION; QUANTUM CASCADE MECHANISM;

PHOTOLUMINESCENCE;

EID: 0036698530 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.5073 Document Type: Article

Times cited : (1)

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