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Applied Physics Letters

Volumn 70, Issue 12, 1997, Pages 1581-1583

Influence of Γ-X resonances on Γ1 ground state electron occupation in type-I GaAs/AlAs superlattice

(5) Hosoda, M a Tominaga, K a Ohtani, N a Mimura, H b Nakayama, M c

a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL (Japan)

b TOHOKU UNIVERSITY (Japan)

c Osaka Prefecture University (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON ENERGY LEVELS; ELECTRON RESONANCE; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES;

BIAS VOLTAGE; CARRIER TRANSPORT;

ELECTRON TRANSPORT PROPERTIES;

EID: 0031102772 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.118637 Document Type: Article

Times cited : (13)

References (10)

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5
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- M. Hosoda, N. Ohtani, H. Mimura, K. Tominaga, P. Davis, T. Watanabe, G. Tanaka, and K. Fujiwara, Phys. Rev. Lett. 75, 4500 (1995).
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- Mimura, H.¹ Ohtani, N.² Hosoda, M.³ Tominaga, K.⁴ Watanabe, T.⁵ Tanaka, G.⁶ Fujiwara, K.⁷

7
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- unpublished
- M. Hosoda, H. Mimura, N. Ohtani, K. Tominaga, K. Fujita, T. Watanabe, H. Inomata, and M. Nakayama (unpublished).
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10
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- note
- 1 transition under zero electric field becomes allowed by the breaking symmetry of the wave functions under the QCSE regime.

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