Intersubband electroluminescence using X-Γ carrier injection in a GaAs/AlAs superlattice

Applied Physics Letters

Volumn 77, Issue 6, 2000, Pages 848-850

  Domoto, C ^a   Ohtani, N ^a   Kuroyanagi, K ^a   Vaccaro, P O ^a   Takeuchi, H ^b   Nakayama, M ^b   Nishimura, T ^c  

^a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^b Osaka Prefecture University   (Japan)

^c KYOCERA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010736281     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1306911     Document Type: Article

References (9)

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