Comparison of HVPE GaN films and substrates grown on sapphire and on MOCVD GaN epi-layer

Materials Letters

Volumn 46, Issue 5, 2000, Pages 286-290

  Kim, H M ^a   Kang, T W ^a   Oh, J E ^b  

^a Dongguk University   (South Korea)

^b Ctr Electron Mat Components H   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; FILM GROWTH; IMAGING TECHNIQUES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLISHING; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; VAPOR PHASE EPITAXY; X RAY CRYSTALLOGRAPHY;

CATHODOLUMINESCENCE SPECTROSCOPY; DOUBLE CRYSTAL X RAY DIFFRACTION; FREE STANDING SUBSTRATES; GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY; MECHANICAL POLISHING;

SEMICONDUCTING FILMS;

EID: 0034502873     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(00)00189-0     Document Type: Article

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