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Computer Physics Communications

Volumn 147, Issue 1-2, 2002, Pages 130-133

First-principle molecular-dynamics simulations of the sticking of Ga and N gas-phase atoms on wurtzite GaN surfaces

(1) Tsai, M H a

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

Author keywords

Gallium nitride; Molecular dynamic; Simulation; Sticking; Surface; Trajectory

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ORIENTATION; GALLIUM NITRIDE; THIN FILMS; VACUUM;

STICKING COEFFICIENTS;

MOLECULAR DYNAMICS;

EID: 0036681509 PISSN: 00104655 EISSN: None Source Type: Journal
DOI: 10.1016/S0010-4655(02)00231-X Document Type: Conference Paper

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.