Drift region optimization of lateral RESURF devices

Solid-State Electronics

Volumn 46, Issue 8, 2002, Pages 1177-1184

  Vestling, L ^a   Olsson, J ^a   Eklund, K H ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

Breakdown; High voltage; RESURF

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC CONDUCTANCE; OPTIMIZATION; RESISTORS;

DRIFT REGION; HIGH VOLTAGE LATERAL DEVICES;

CMOS INTEGRATED CIRCUITS;

EID: 0036680369     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00016-3     Document Type: Article

References (9)

1. High voltage thin layer devices (RESURF devices)
2. Optimization of RESURF LDMOS transistors: An analytical approach
3. Modeling and process implementation of implanted RESURF type devices
4. Integration of a novel high-voltage giga-hertz DMOS transistor into a standard CMOS process
5. A review of RESURF technology
6. A new 800 V lateral MOSFET with dual conduction paths
7. High voltage LDMOS transistors for increasing RF power density and gain