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Volumn 41, Issue 7 B, 2002, Pages 4916-4918

Nanofabrication using atomic force microscopy lithography for molecular devices

Author keywords

Atomic force microscopy; Four term electrodes; Lithography; Nano fabrication; Reactive ion beam etching; Resist; Scanning probe lithography

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRODES; LITHOGRAPHY; REACTIVE ION ETCHING; SUBSTRATES; SURFACE ROUGHNESS;

MOLECULAR ELECTRONICS; NANOFABRICATIONS;

NANOTECHNOLOGY;

EID: 0036657149 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.4916 Document Type: Conference Paper

Times cited : (13)

References (16)

1
- 0035834415
- Y. Huang, X. Duan, Y. Cui, L. J. Lauhon, K.-H. Kim and C. M. Lieber: Science 294 (2001) 1313.
- (2001) Science , vol.294 , pp. 1313
- Huang, Y.¹ Duan, X.² Cui, Y.³ Lauhon, L.J.⁴ Kim, K.-H.⁵ Lieber, C.M.⁶

2
- 0035834444
- A. Bachtold, P. Hadley, T. Nakanishi and C. Dekker: Science 294 (2001) 1317.
- (2001) Science , vol.294 , pp. 1317
- Bachtold, A.¹ Hadley, P.² Nakanishi, T.³ Dekker, C.⁴

3
- 0002252024
- M. A. McCord and R. F. W. Pease: J. Vac. Sci. & Technol. B 4 (1986) 86.
- (1986) J. Vac. Sci. & Technol. B , vol.4 , pp. 86
- McCord, M.A.¹ Pease, R.F.W.²

4
- 21544435813
- C. R. K. Martian, F. K. Perkins, S. L. Brandow, T. S. Koloski, E. A. Dobisz and J. M. Calvert: Appl. Phys. Lett. 64 (1994) 390.
- (1994) Appl. Phys. Lett. , vol.64 , pp. 390
- Martian, C.R.K.¹ Perkins, F.K.² Brandow, S.L.³ Koloski, T.S.⁴ Dobisz, E.A.⁵ Calvert, J.M.⁶

5
- 0029483682
- I. I. Smolyaninov, D. L. Mazzoni and C. C. Davis: Appl. Phys. Lett. 67 (1995) 3859.
- (1995) Appl. Phys. Lett. , vol.67 , pp. 3859
- Smolyaninov, I.I.¹ Mazzoni, D.L.² Davis, C.C.³

6
- 36449008633
- A. Majumdar, P. I. Oden, J. P. Carrejo, L. A. Nagahara, J. J. Graham and J. Alexander: Appl. Phys. Lett. 61 (1992) 2293.
- (1992) Appl. Phys. Lett. , vol.61 , pp. 2293
- Majumdar, A.¹ Oden, P.I.² Carrejo, J.P.³ Nagahara, L.A.⁴ Graham, J.J.⁵ Alexander, J.⁶

7
- 36449002590
- S. W. Park, H. T. Soh, C. F. Quate and S.-I. Park: Appl. Phys. Lett. 67 (1995) 2415.
- (1995) Appl. Phys. Lett. , vol.67 , pp. 2415
- Park, S.W.¹ Soh, H.T.² Quate, C.F.³ Park, S.-I.⁴

8
- 36448999924
- M. Wendel, S. Kuhn, H. Lorenz, J. P. Kotthaus and M. Holland: Appl. Phys. Lett. 65 (1994) 1775.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 1775
- Wendel, M.¹ Kuhn, S.² Lorenz, H.³ Kotthaus, J.P.⁴ Holland, M.⁵

9
- 0001646713
- K. Wilder, H. T. Soh, A. Atalar and C. F. Quate: J. Vac. Sci. & Technol. B 15 (1997) 1811.
- (1997) J. Vac. Sci. & Technol. B , vol.15 , pp. 1811
- Wilder, K.¹ Soh, H.T.² Atalar, A.³ Quate, C.F.⁴

10
- 0032027868
- M. Ishibashi, S. Heike, H. Kajiyama, Y. Wada and T. Hashizume: Appl. Phys. Lett. 72 (1998) 1581.
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1581
- Ishibashi, M.¹ Heike, S.² Kajiyama, H.³ Wada, Y.⁴ Hashizume, T.⁵

11
- 0000572915
- M. Ishibashi, N. Sugita, S. Heike, H. Kajiyama and T. Hashizume: Jpn. J. Appl. Phys. 38 (1999) 2445.
- (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 2445
- Ishibashi, M.¹ Sugita, N.² Heike, S.³ Kajiyama, H.⁴ Hashizume, T.⁵

12
- 0000867007
- M. Ishibashi, S. Heike, N. Sugita, H. Kajiyama and T. Hashizume: J. Photopolym. Sci. Technol. 12 (1999) 373.
- (1999) J. Photopolym. Sci. Technol. , vol.12 , pp. 373
- Ishibashi, M.¹ Heike, S.² Sugita, N.³ Kajiyama, H.⁴ Hashizume, T.⁵

13
- 0034431348
- M. Ishibashi, S. Heike and T. Hashizume: Jpn. J. Appl. Phys. 39 (2000) 7060.
- (2000) Jpn. J. Appl. Phys. , vol.39 , pp. 7060
- Ishibashi, M.¹ Heike, S.² Hashizume, T.³

14
- 0035357721
- M. Kato, M. Ishibashi, S. Heike and T. Hashizume: Jpn. J. Appl. Phys. 40 (2001) 4317.
- (2001) Jpn. J. Appl. Phys. , vol.40 , pp. 4317
- Kato, M.¹ Ishibashi, M.² Heike, S.³ Hashizume, T.⁴

15
- 0342819025
- S. Iijima: Nature 354 (1991) 56.
- (1991) Nature , vol.354 , pp. 56
- Iijima, S.¹

16
- 0033076599
- K. Yoshida, T. Shimomura, K. Ito and R. Hayakawa: Langmuir 15 (1999) 910.
- (1999) Langmuir , vol.15 , pp. 910
- Yoshida, K.¹ Shimomura, T.² Ito, K.³ Hayakawa, R.⁴

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