Charge injection using gate-induced-drain-leakage current for characterization of plasma edge damage in CMOS devices

IEEE Transactions on Semiconductor Manufacturing

Volumn 11, Issue 2, 1998, Pages 211-216

  Brozek, Tomasz ^b   Rao, V Ramgopal ^c   Sridharan, Anand ^d   Werking, James D ^a,e   Chan, Y D ^e   Viswanathan, Chand R ^a,c  

^a IEEE

^b MOTOROLA INC   (United States)

^c University of California   (United States)

^d INTEL CORPORATION   (United States)

^e SEMATECH   (United States)

Author keywords

Charge injection; GIDL; Plasma damaga; Reliability; Submicron MOSFET's

Indexed keywords

GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUIT TESTING; LEAKAGE CURRENTS; PLASMA ETCHING;

GATE INDUCED DRAIN LEAKAGE (GIDL) CURRENT; LOCALIZED CHARGE INJECTION; PLASMA EDGE DAMAGE;

CMOS INTEGRATED CIRCUITS;

EID: 0032070325     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.670162     Document Type: Article

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