Convectional mode and electrical field in silicon melts under vertical, horizontal, and rotating magnetic fields

Numerical Heat Transfer; Part A: Applications

Volumn 42, Issue 1-2, 2002, Pages 33-54

  Akamatsu, Masato ^a   Higano, Mitsuo ^a   Ozoe, Hiroyuki ^a  

^a AKITA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; MAGNETIC FIELD EFFECTS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; TEMPERATURE DISTRIBUTION;

SILICON MELTS;

HEAT CONVECTION;

EID: 0036645467     PISSN: 10407782     EISSN: None     Source Type: Journal    
DOI: 10.1080/10407780290059413     Document Type: Article

References (17)

1. A comparison of calculated and measured temperatures for heated mercury in a vertical magnetic field
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3. Oxygen transfer during single silicon crystal growth in czochralski system with vertical magnetic fields
4. Melt motion in a czochralski silicon puller with a weak transverse magnetic field
5. Effect of the magnetic flux direction on LEC GaAs growth under magnetic field
6. Evaluation of the quality of HMCZ Si single crystals with a diameter of 200 mm
7. Dopant concentration profile in a czochralski flow of liquid metal in a vertical or a horizontal magnetic field
8. Combined effects of crucible rotation and horizontal magnetic field on dopant concentration in a czochralski melt
9. Centrifugal pumping during czochralski silicon growth with a strong transverse magnetic field
10. Silicon crystal growth by the electromagnetic czochralski (EMCZ) method
11. Rotating magnetic fields: Fluid flow and crystal growth applications
12. Combining a rotating magnetic field and crystal rotation in the floating-zone process with a needle-eye induction coil
13. A technique to circumvent a singularity at a radial center with application for a three-dimensional cylindrical system
14. Effect of prandtl number and computational schemes on the oscillatory natural convection in an enclosure
15. Thermophysical properties data on molten semiconductors
16. Use of an inhomogeneous magnetic field for silicon crystal growth