Evaluation of the quality of HMCZ Si single crystals with a diameter of 200 mm

Materials Science and Engineering B

Volumn 36, Issue 1-3, 1996, Pages 142-145

  Iino, E ^a   Takano, K ^a   Kimura, M ^a   Yamagishi, H ^a  

^a SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

Device fabrication; Silicon

Indexed keywords

EID: 0009666841     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01278-8     Document Type: Article

References (8)

1. T. Suzuki, N. Isawa, Y. Okubo and K. Hoshi, Semiconductor Silicon/1981, The Electrochemical Society, Pennington, NJ, 1981, p. 90.
2. S. Takasu, S. Takahasi, M. Ohwa, O. Suzuki and T. Higuchi, Semiconductor Silicon/1990, The Electrochemical Society, Pennington, NJ, 1990, p. 45.
3. I. Fusegawa and H. Yamagishi, Semicond. Sci. Technol, 7 (1992) A304.
4. H. Yamagishi, I. Fusegawa, N. Fujimaki and M. Katayama, Semicond. Sci. Technol., 7 (1992) A135.
5. K. Takano, K. Kitagawa, E. Iino, M. Kimura and H. Yamagishi, presented at 18th Int. Conf. on Defects in Semiconductors, Sendai, Japan, July 23-28, 1995.
6. F. Dupret, P. Nicodeme, Y. Ryckmans, P. Wonters and M.J. Crochet, Int. J. Heat Mass Transfer, 33 (1990) 1849.
7. K. Hoshi, N. Isawa, T. Suzuki, M. Nikami, Y. Okubo and Y. Kato, Nikkei Microdevices, 7 (1986) 87.
8. I. Fusegawa and H. Yamagishi, Mater. Res. Soc. Symp. Proc., Vol. 262, Materials Research Society, Pittsburgh, PA, 1992, 63.