Metal-based single electron transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 1402-1405

  Chen, W ^a   Ahmed, H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5844328017     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589548     Document Type: Article

References (6)

1. W. Chen, H. Ahmed, and K. Nakazato, Appl. Phys. Lett. 66, 3383 (1995).
2. D. L. Klein, J. E. B. Katari, R. Roth, A. P. Alivisatos, and P. L. McEuen, Appl. Phys. Lett. 68, 2574 (1995).
3. T. A. Fulton and G. J. Dolan, Phys. Rev. Lett. 59, 109 (1987).
4. Y. Nakamura, D. L. Klein, and J. S. Tsai, Appl. Phys. Lett. 68, 275 (1996).
5. K. Nakazato, R. J. Blaikie, and H. Ahmed, J. Appl. Phys. 75, 5123 (1994).
6. W. Chen and H. Ahmed, J. Vac. Sci. Technol. B 13, 2883 (1995).