Study of charging phenomena in MgO single crystal: Effect of polishing, annealing temperature and crystallographic orientation

Journal of the European Ceramic Society

Volumn 22, Issue 7, 2002, Pages 1149-1154

  Dammak, N ^a   Trigui, F ^a   Temga, T ^a   Kallel, A ^a   Fakhfakh, Z ^a   Treheux, D ^b  

^a Faculté des Sciences de Sfax   (Tunisia)

^b ECOLE CENTRALE DE LYON   (France)

Author keywords

Crystals; Defects; Dielectric properties; MgO; Trapping

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CERAMIC MATERIALS; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; DIELECTRIC MATERIALS; DISLOCATIONS (CRYSTALS); ELECTRON TRAPS; GRAIN BOUNDARIES; PERMITTIVITY; POINT DEFECTS; POLISHING; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS;

CHARGE TRAPPING;

MAGNESIUM COMPOUNDS;

DEFECT;

EID: 0036643259     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0955-2219(01)00427-7     Document Type: Article

References (14)

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2. 3-AION ceramic composites
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4. Plastic deformation of aluminium oxide by indentation and abrasion
5. Electronic and defect processes in oxides the polaron in action
6. Charge localization and transport in disordered dielectric materials
7. Space charge measurement in a dielectric material after irradiation with a 30 kV electron beam
8. Charging effects under electron beam injection on sapphire implanted with zirconium ions (0-7803-3851-0)
9. 3
10. Slip system in MgO single crystal