Observation of the pyroelectric effect in strained piezoelectric InGaAs/GaAs quantum-wells grown on (111) GaAs substrates

Microelectronics Journal

Volumn 33, Issue 7, 2002, Pages 531-534

  Cho, S ^a   Majerfeld, A ^a   Sanchez J J ^b   Munoz E ^b   Tijero, J M G ^b   Izpura, J I ^b  

^a UCB 428   (United States)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

Franz Keldysh oscillations; Piezoelectric field; Pyroelectric effect

Indexed keywords

CRYSTAL GROWTH; DIODES; PHOTOCURRENTS; PIEZOELECTRICITY; PYROELECTRICITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; THERMOANALYSIS;

PHOTOCURRENT SPECTROSCOPY; PHOTOREFLECTANCE SPECTROSCOPY; PYROELECTRIC COEFFICIENTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036642266     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(02)00014-9     Document Type: Conference Paper

References (10)

1. Pyroelectric effect in semiconductor heterostructures
2. Direct determination of the piezoelectric field in (111) strained InGaAs/GaAs multiple quantum well p-i-n structures by photoreflectance
3. Determination of the pyroelectric coefficient in strained InGaAs/GaAs quantum-wells grown on (111)B GaAs substrates
4. 1-xAs quantum-wells
5. Critical layer thickness on (111)B-oriented InGaAs/GaAs heteroepitaxy
6. Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates
7. Piezoelectric field determination in strained InGaAs quantum wells grown on [111]B GaAs substrates by differential photocurrent
8. Differential photocurrent spectroscopy - A novel technique for semiconductor characterization
9. Determining the electric-field in [111] strained-layer quantum-wells
10. Strain-generated electric-fields in [111] growth axis strained-layer superlattices