Direct determination of the piezoelectric field in (111) strained InGaAs/GaAs multiple quantum well p-i-n structures by photoreflectance

Microelectronic Engineering

Volumn 43-44, Issue , 1998, Pages 171-177

  Dickey, S A ^a   Majerfeld, A ^a   Sanchez Rojas J L ^b   Sacedon A ^b   Munoz E ^b   Sanz Hervas A ^c   Aguilar, M ^c   Kim, B W ^d  

^a UCB 450   (United States)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c Deptos Ing Electronica y Tecn E   (Spain)

^d Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

(111)B InGaAs GaAs multiple quantum wells (MQW); Interband optical transitions; Photoreflectance; Piezoelectric field

Indexed keywords

EID: 0001189304     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00160-9     Document Type: Article

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