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Microelectronics Journal

Volumn 33, Issue 7, 2002, Pages 547-552

Characterisation of strained (111)B InGaAs/GaAs quantum well lasers with intracavity optical modulator

(6) Fleischmann, T a Ulloa, J M b Moran, M a Rees, G J a Woodhead, J a Hopkinson, M a

a UNIVERSITY OF SHEFFIELD (United Kingdom)

b UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

Author keywords

Diode; Optical modulator; Semiconductor lasers

Indexed keywords

HYSTERESIS; LIGHT MODULATION; LIGHT MODULATORS; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM ARSENIDE;

INTEGRATED AMPLITUDE MODULATION;

QUANTUM WELL LASERS;

EID: 0036642157 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/S0026-2692(02)00017-4 Document Type: Conference Paper

Times cited : (6)

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