InGaAs-GaAs quantum-well lasers with monolithically integrated intracavity electroabsorption modulators by selective-area MOCVD

IEEE Photonics Technology Letters

Volumn 8, Issue 1, 1996, Pages 78-80

  Lammert, R M ^a   Forbes, D V ^a   Smith, G M ^a   Osowski, M L ^a   Coleman, J J ^a,b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTROOPTICAL DEVICES; EPITAXIAL GROWTH; INTEGRATED OPTOELECTRONICS; MODULATORS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

MONOLITHICALLY INTEGRATED INTRACAVITY ELECTROABSORPTION MODULATORS; SELECTIVE AREA METALLORGANIC CHEMICAL VAPOR DEPOSITION;

QUANTUM WELL LASERS;

EID: 0029755988     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.475784     Document Type: Article

References (17)

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