Heavily p-type doped ZnSe using Te and N codoping

Journal of Electronic Materials

Volumn 31, Issue 7, 2002, Pages 799-801

  Gu, Y ^a   Kuskovsky, Igor L ^a   Neumark, G F ^a   Lin, W ^b   Guo, S P ^b   Maksimov, O ^b   Tamargo, M C ^b  

^a Columbia University ^*  (United States)

^b CITY COLLEGE OF NEW YORK   (United States)

Author keywords

p type; Photoluminescence; Te clusters; ZnSe

Indexed keywords

CRYSTAL GROWTH; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS;

SOLID-STATE LIGHT EMITTERS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0036637773     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0239-8     Document Type: Article

References (13)

1. Wide gap II-VI compounds as electronic materials