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Journal De Physique. IV : JP

Volumn 12, Issue 4, 2002, Pages

Multi-model hierarchy approach to simulate barrel reactors for epitaxial silicon deposition

(6) Di Stanislao, M a Valente, G a Fascella, S a Spampinato, C a Masi, M a Carra S a

a POLITECNICO DI MILANO (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; COMPUTER SIMULATION; EPITAXIAL GROWTH; FLUID DYNAMICS; MATHEMATICAL MODELS; OPTIMIZATION; PRODUCTIVITY; REACTION KINETICS; THICK FILMS; THICKNESS MEASUREMENT; THROUGHPUT;

BARREL REACTORS; EPITAXIAL SILICON DEPOSITION; FINITE VOLUME CODE;

SILICON WAFERS;

EID: 0036611830 PISSN: 11554339 EISSN: None Source Type: Conference Proceeding
DOI: 10.1051/jp4:20020086 Document Type: Conference Paper

Times cited : (5)

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